2SC1946A TRANSISTOR RF MITSUBISHI NPN
DESCRIPTION 2SC1946A is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers on VHP band mobile radio applications.
FEATURES • High power gain: Gpei10dB @VCC = 13.5V, P0 = 30W,f = 175MHr • Emitter ballasted construction and gold metallization for high reliability and good performances
• Low thermal resistance ceramic package with flange.
• Ability of withstanding more than 20:1 load VSWR when operated at Vcc = 15.2V, P0 = SOW, f = 175MHz,
• Equivalent input/output impedance at rated operating conditions: Zjn =0.65+ j 1.417 z0ut = 1 -9+ jojsn